| PART |
Description |
Maker |
| 2SD2639 2SB1683 |
General-Purpose Amplifier Transistors
140V / 12A, AF 60W Output Applications
140V / 12A / AF 60W Output Applications
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| IRGPC30U |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| IRG4BC30W_04 IRG4BC30WPBF IRG4BC30W04 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| 2SB922L 2SD1238L 2SD1238LR 2SB922LS |
Dual/Triple-Voltage µP Supervisory Circuits
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 12A I(C)
80V/12A Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| 2N3637 |
140V/175 , 1A PNP Small Signal Transistor - TO-39 & TO-5
|
ON Semiconductor
|
| IRG4BC30WPBF |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）最大\u003d 2.70V @和VGE \u003d 15V的，集成电路\u003d 12A条）
|
International Rectifier, Corp.
|
| MIC4452BM MIC4452BN MIC4452CT MIC4451 MIC4451BM MI |
12A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process
|
MICREL[Micrel Semiconductor]
|
| 2SD1816S-TL-E 2SD1816S-H 2SD1816S-E 2SD1816S-TL-H |
Bipolar Transistor
Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
|
ON Semiconductor
|
| CN455 |
0.900W General Purpose NPN Plastic Leaded Transistor. 140V Vceo, 1.000A Ic, 100 - 300 hFE
|
Continental Device India Limited
|
| SBA120-18J |
180V/ 12A Rectifier
SWITCH PUSHBUTTON PANEL SEALED
180V 12A Rectifier
Schottky Barrier Diode (Twin Type Cathode Common) 180V, 12A Rectifier
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm
Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm
Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC
Analog IC 模拟IC
|
Bourns, Inc.
|
